2SA139 Specs and Replacement
Type Designator: 2SA139
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.08 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO1
2SA139 Substitution
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2SA139 datasheet
Ordering number EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp. 2003A Low-noise use. [2SA1391/2SC3382] Noise Test Circuit JEDEC TO-92 B Base ( ) 2SA1391 EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute Maximum Rating... See More ⇒
Ordering number EN1943A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp. 2003A [2SA1392/2SC3383] JEDEC TO-92 B Base ( ) 2SA1392 EIAJ SC-43 C Collector SANYO NF E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratin... See More ⇒
DATA SHEET SILICON POWER TRANSISTOR 2SA1395 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1395 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that does not req... See More ⇒
Detailed specifications: 2SA1386O, 2SA1386P, 2SA1386Y, 2SA1387, 2SA1388, 2SA1388O, 2SA1388Y, 2SA1389, BC546, 2SA1390, 2SA1391, 2SA1391R, 2SA1391S, 2SA1391T, 2SA1391U, 2SA1392, 2SA1392R
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