2SA1391R Datasheet and Replacement
Type Designator: 2SA1391R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3.7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
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2SA1391R Datasheet (PDF)
2sa1391 2sc3382.pdf

Ordering number:EN1942APNP/NPN Epitaxial Planar Silicon Transistors2SA1391/2SC3382Low Noise AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A Low-noise use.[2SA1391/2SC3382]Noise Test CircuitJEDEC : TO-92 B : Base( ) : 2SA1391EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Rating
2sa1392 2sc3383.pdf

Ordering number:EN1943APNP/NPN Epitaxial Planar Silicon Transistors2SA1392/2SC3383AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A[2SA1392/2SC3383]JEDEC : TO-92 B : Base( ) : 2SA1392EIAJ : SC-43 C : CollectorSANYO : NF E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratin
2sa1395.pdf

DATA SHEETSILICON POWER TRANSISTOR2SA1395PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1395 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching, and is ideal for use as a driver in devices such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that does not req
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD2134 | FK3300 | HSE830 | NSS1C301E | OC81DM | FV918 | STC9014D
Keywords - 2SA1391R transistor datasheet
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History: 2SD2134 | FK3300 | HSE830 | NSS1C301E | OC81DM | FV918 | STC9014D



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