2SA1397 Specs and Replacement
Type Designator: 2SA1397
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO220
2SA1397 Substitution
- BJT ⓘ Cross-Reference Search
2SA1397 datasheet
Ordering number EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp. 2003A Low-noise use. [2SA1391/2SC3382] Noise Test Circuit JEDEC TO-92 B Base ( ) 2SA1391 EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute Maximum Rating... See More ⇒
Ordering number EN1943A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp. 2003A [2SA1392/2SC3383] JEDEC TO-92 B Base ( ) 2SA1392 EIAJ SC-43 C Collector SANYO NF E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratin... See More ⇒
DATA SHEET SILICON POWER TRANSISTOR 2SA1395 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1395 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that does not req... See More ⇒
Detailed specifications: 2SA1392R, 2SA1392S, 2SA1392T, 2SA1392U, 2SA1393, 2SA1394, 2SA1395, 2SA1396, A1013, 2SA1398, 2SA1399, 2SA14, 2SA1400, 2SA1401, 2SA1402, 2SA1402C, 2SA1402D
Keywords - 2SA1397 pdf specs
2SA1397 cross reference
2SA1397 equivalent finder
2SA1397 pdf lookup
2SA1397 substitution
2SA1397 replacement








