2SA141 Datasheet and Replacement

Ordering number : EN2005B2SA1416 / 2SC3646SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1416 / 2SC3646High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC

Ordering number : EN2006C2SA1417 / 2SC3647SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1417 / 2SC3647ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.Specifications ( ) : 2S

Ordering number : EN1788B2SA1418 / 2SC3648SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching,2SA1418 / 2SC3648Preriver ApplicationsApplications Color TV audio output, inverter.Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall siz

Ordering number:EN1720APNP/NPN Epitaxial Planar Silicon Transistors2SA1415/2SC3645High-Voltage Switching,Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage (VCEO=160V).2038 Excellent linearity of hFE and small Cob.[2SA1415/2SC3645] Fast switching speed. Very small size marking it easy to provide high

Ordering number : EN2007B2SA1419 / 2SC3649SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1419 / 2SC3649High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs.Specifications ( ) :

DATA SHEETwww.onsemi.comBipolar TransistorELECTRICAL CONNECTION22()100 V, ()1 A, Low VCE(sat), (PNP)NPN Single PCP1: Base1 12: Collector3: Emitter2SA1416, 2SC36463 32SA1416 2SC3646Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed12 Ultrasmall Size Making it Easy to Provi

Ordering number : EN1788C2SA1418/2SC3648Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 0.7A, Low VCE sat , PNP NPN Single PCPApplicaitons Color TV audio output, inverterFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number : EN2005C2SA1416/2SC3646Bipolar Transistorhttp://onsemi.com() ) ( ), (100V, ( 1A, Low VCE sat PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1416Absol

DATA SHEETwww.onsemi.comBipolar Transistor12(-)100 V, (-)2 A, Low VCE(sat),3SOT-89-3(PNP) NPN Single PCPCASE 419AU2SA1417, 2SC3647ELECTRICAL CONNECTIONFeatures2 2 Adoption of FBET, MBIT Processes1 : Base High Breakdown Voltage and Large Current Capacity1 1 2 : Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized3 : Emitter

Ordering number : EN2006D2SA1417/2SC3647Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICsSpecifications ( ) : 2SA1417Absolute Maximum Rati

Ordering number : EN1788C2SA1418/2SC3648Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 0.7A, Low VCE sat , PNP NPN Single PCPApplicaitons Color TV audio output, inverterFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

SMD Type TransistorsPNP Silicon Transistor2SA1412-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesHigh Voltage: VCEO=-400VHigh speed:tr 0.7s0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -400 VCo

SMD Type TransistorsPNP Transistors2SA1413-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High Voltage:VCEO=-600V0.127 High Speed : tf 1us+0.10.80-0.1max Complement to 2SC3632-Z+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol

SMD Type TransistorsPNP Transistors 2SA14181.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current CapacityFast Switching Speed0.42 0.10.46 0.1 Complementary to 2SC36481.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -16

SMD Type TransistorsPNP Transistors 2SA14171.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current Capacity Complementary to 2SC36470.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter -

SMD Type orSMD Type TransistICsPNP Transistors 2SA1411SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesVery high DC current gain:hFE=500 to 1600.High VEBO Voltage:VEBO=-10V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -25 VCollector-emitte

SMD Type TransistorsPNP Transistors 2SA14191.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current Capacity Complementary to 2SC36490.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter -

SMD Type TransistorsPNP Transistors 2SA14151.70 0.1FeaturesAdoption of FBET ProcessHigh Breakdown Voltage (VCEO = 160V)Excellent Linearlity of hFE and Small Cob0.42 0.10.46 0.1Fast Switching Speed Complementary to 2SC36451.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Em

SMD Type TransistorsPNP Transistors 2SA14161.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current Capacity0.42 0.10.46 0.1Fast Switching Time Complementary to 2SC36461.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100

isc Silicon NPN Power Transistor 2SA1412-ZDESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay driversHigh-speed invertersConvertersHigh current switching applicationsABSOLUTE MA

isc Silicon PNP Power Transistor 2SA1413-ZDESCRIPTIONWith TO-252(DPAK) packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR