2SA1417R Specs and Replacement
Type Designator: 2SA1417R
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT89
2SA1417R Substitution
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2SA1417R datasheet
Ordering number EN2006C 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching 2SA1417 / 2SC3647 Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. Specifications ( ) 2S... See More ⇒
DATA SHEET www.onsemi.com Bipolar Transistor 1 2 (-)100 V, (-)2 A, Low VCE(sat), 3 SOT-89-3 (PNP) NPN Single PCP CASE 419AU 2SA1417, 2SC3647 ELECTRICAL CONNECTION Features 2 2 Adoption of FBET, MBIT Processes 1 Base High Breakdown Voltage and Large Current Capacity 1 1 2 Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized 3 Emitter ... See More ⇒
2sa1417s 2sa1417t 2sc3647s 2sc3647t.pdf ![]()
Ordering number EN2006D 2SA1417/2SC3647 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) 2SA1417 Absolute Maximum Rati... See More ⇒
Detailed specifications: 2SA1415R, 2SA1415S, 2SA1415T, 2SA1416, 2SA1416R, 2SA1416S, 2SA1416T, 2SA1417, S8050, 2SA1417S, 2SA1417T, 2SA1418, 2SA1418R, 2SA1418S, 2SA1418T, 2SA1419, 2SA1419R
Keywords - 2SA1417R pdf specs
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