All Transistors. 2SA1417R Datasheet

 

2SA1417R Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1417R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89

 2SA1417R Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1417R Datasheet (PDF)

 7.1. Size:126K  sanyo
2sa1417.pdf

2SA1417R
2SA1417R

 7.2. Size:57K  sanyo
2sa1417 2sc3647.pdf

2SA1417R
2SA1417R

Ordering number : EN2006C2SA1417 / 2SC3647SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1417 / 2SC3647ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.Specifications ( ) : 2S

 7.3. Size:158K  onsemi
2sa1417 2sc3647.pdf

2SA1417R
2SA1417R

DATA SHEETwww.onsemi.comBipolar Transistor12(-)100 V, (-)2 A, Low VCE(sat),3SOT-89-3(PNP) NPN Single PCPCASE 419AU2SA1417, 2SC3647ELECTRICAL CONNECTIONFeatures2 2 Adoption of FBET, MBIT Processes1 : Base High Breakdown Voltage and Large Current Capacity1 1 2 : Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized3 : Emitter

 7.4. Size:213K  onsemi
2sa1417s 2sa1417t 2sc3647s 2sc3647t.pdf

2SA1417R
2SA1417R

Ordering number : EN2006D2SA1417/2SC3647Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICsSpecifications ( ) : 2SA1417Absolute Maximum Rati

 7.5. Size:1526K  kexin
2sa1417.pdf

2SA1417R
2SA1417R

SMD Type TransistorsPNP Transistors 2SA14171.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current Capacity Complementary to 2SC36470.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter -

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top