2SA1430B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1430B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140(typ) MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TOSH2
2SA1430B Transistor Equivalent Substitute - Cross-Reference Search
2SA1430B Datasheet (PDF)
2sa1435.pdf
Ordering number:ENN1856APNP Epitaxial Planar Silicon Transistor2SA1435High hFE, AF Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2003B[2SA1435]Features 5.04.04.0 Adoption of MBIT process. High DC current gain (hFE=500 to 1200). Large current capacity. Low colletor-to-e
2sa1434.pdf
Ordering number:EN1853APNP Epitaxial Planar Silicon Transistor2SA1434High hFE, Low-FrequencyGeneral-Purpose Amp ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2018A[2SA1434]Features Very small-sized package permitting 2SA1434-usedsets to be made smaller, slimer. Adoption of FBET process.
2sa1437.pdf
Ordering number:EN2524APNP Epitaxial Planar Silicon Transistor2SA1437High-hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003AFeatures[2SA1437] Very small-sized package permitting sets to be madesmaller and slimer. Adoption of FBET process. High DC current gain : (hFE=400 to 1000). Hig
2sa1433.pdf
Ordering number:EN3471PNP Epitaxial Planar Silicon Transistor2SA1433High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT (Gain-Bandwidth Product).unit:mm Small reverse transfer capacitance (Cre=1.3pF).2006A Adoption of FBET process.[2SA1433]EIAJ : SC-51 B : BaseSANYO : MP C :CollectorE : EmitterSpecificationsAbsolute Maximum Ratings
2sa1436.pdf
Ordering number:ENN2456PNP Epitaxial Planar Silicon Transistor2SA1436High hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003BFeatures[2SA1436] Adoption of MBIT process.5.04.04.0 High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation vol
2sa1434.pdf
SMD Type orSMD Type TransistICsPNP Transistors 2SA1434SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesAdoption of FBET process.High DC current gain (hFE=500 to 1200).1 2Low collector-to-emitter saturation voltage+0.1+0.050.95-0.1 0.1 -0.01(VCE(sat) 0.5V).1.9+0.1-0.1High VEBO (VEBO 15V).1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25
Datasheet: 2SA1428Y , 2SA1429 , 2SA1429O , 2SA1429Y , 2SA142A , 2SA143 , 2SA1430 , 2SA1430A , 2SC2625 , 2SA1430C , 2SA1431 , 2SA1431O , 2SA1431Y , 2SA1432 , 2SA1432O , 2SA1432R , 2SA1433 .
