2SA1437 Datasheet and Replacement
Type Designator: 2SA1437
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 85 MHz
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: TO92
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2SA1437 Datasheet (PDF)
2sa1437.pdf

Ordering number:EN2524APNP Epitaxial Planar Silicon Transistor2SA1437High-hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003AFeatures[2SA1437] Very small-sized package permitting sets to be madesmaller and slimer. Adoption of FBET process. High DC current gain : (hFE=400 to 1000). Hig
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RT2P01M | 2N428A | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | 2SC5084
Keywords - 2SA1437 transistor datasheet
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History: RT2P01M | 2N428A | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | 2SC5084



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