2SA1437 Datasheet and Replacement
Type Designator: 2SA1437
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 85 MHz
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: TO92
2SA1437 Substitution
2SA1437 Datasheet (PDF)
2sa1437.pdf

Ordering number:EN2524APNP Epitaxial Planar Silicon Transistor2SA1437High-hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003AFeatures[2SA1437] Very small-sized package permitting sets to be madesmaller and slimer. Adoption of FBET process. High DC current gain : (hFE=400 to 1000). Hig
Datasheet: 2SA1431Y , 2SA1432 , 2SA1432O , 2SA1432R , 2SA1433 , 2SA1434 , 2SA1435 , 2SA1436 , 2SB817 , 2SA1438 , 2SA144 , 2SA1440 , 2SA1441 , 2SA1442 , 2SA1443 , 2SA1444 , 2SA145 .
History: 2SC2712-LG | FMMT4248 | 2SA1418R | BSV99 | KTC812E | 2SB14 | GS9011H
Keywords - 2SA1437 transistor datasheet
2SA1437 cross reference
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History: 2SC2712-LG | FMMT4248 | 2SA1418R | BSV99 | KTC812E | 2SB14 | GS9011H



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