2SA1450 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1450
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
2SA1450 Transistor Equivalent Substitute - Cross-Reference Search
2SA1450 Datasheet (PDF)
2sa1450 2sc3708.pdf
Ordering number:EN2217APNP/NPN Epitaxial Planar Silicon Transistor2SA1450/2SC3708Low-Frequency Driver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp, AF power amp.2003A High breakdown voltage : VCEO>80V[2SA1450/2SC3708]JEDEC : TO-92 B : Base( ) : 2SA1450 EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute
2sa1452a.pdf
2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1452A High-Speed, High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC3710A Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base vo
2sa1451a.pdf
2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1451A High-Speed, High-Current Switching Applications Unit: mm Low collector saturation voltage : VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC3709A Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base
2sa1451.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3709 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U
2sa1452.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1452 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3710 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U
2sa1452o 2sa1452y.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1452DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3710APPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
2sa1232r 2sa1452q 2sa1452p.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1232DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3012APPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -130 VCBOV Collector-
2sa1451a.pdf
isc Silicon PNP Power Transistor 2SA1451ADESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3709AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25
2sa1451.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3709 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER C
2sa1452.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1452DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3710Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE M
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
