2SA1451O Specs and Replacement
Type Designator: 2SA1451O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 320 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO220
2SA1451O Substitution
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2SA1451O datasheet
2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1451A High-Speed, High-Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC3709A Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3709 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U... See More ⇒
Detailed specifications: 2SA1443, 2SA1444, 2SA145, 2SA1450, 2SA1450R, 2SA1450S, 2SA1450T, 2SA1451, 2SA1015, 2SA1451Y, 2SA1452, 2SA1452O, 2SA1452Y, 2SA1453, 2SA1455K, 2SA1458, 2SA1459
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