All Transistors. 2SA1452Y Datasheet

 

2SA1452Y Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1452Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220

 2SA1452Y Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1452Y Datasheet (PDF)

 ..1. Size:176K  cn sptech
2sa1452o 2sa1452y.pdf

2SA1452Y 2SA1452Y

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1452DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3710APPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

 7.1. Size:148K  toshiba
2sa1452a.pdf

2SA1452Y 2SA1452Y

2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1452A High-Speed, High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC3710A Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base vo

 7.2. Size:220K  toshiba
2sa1452.pdf

2SA1452Y 2SA1452Y

 7.3. Size:213K  jmnic
2sa1452.pdf

2SA1452Y 2SA1452Y

JMnic Product Specification Silicon PNP Power Transistors 2SA1452 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3710 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

 7.4. Size:196K  cn sptech
2sa1232r 2sa1452q 2sa1452p.pdf

2SA1452Y 2SA1452Y

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1232DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3012APPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -130 VCBOV Collector-

 7.5. Size:191K  inchange semiconductor
2sa1452.pdf

2SA1452Y 2SA1452Y

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1452DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3710Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE M

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , D882 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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