All Transistors. 2SA1486 Datasheet

 

2SA1486 Datasheet and Replacement


   Type Designator: 2SA1486
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO126
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2SA1486 Datasheet (PDF)

 ..1. Size:174K  nec
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2SA1486

 ..2. Size:195K  inchange semiconductor
2sa1486.pdf pdf_icon

2SA1486

isc Silicon PNP Power Transistor 2SA1486DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 8.1. Size:178K  toshiba
2sa1483.pdf pdf_icon

2SA1486

2SA1483 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1483 High Frequency Amplifier Applications Unit: mm Video Amplifier Applications High Speed SwitcHing Applications High transition frequency: fT = 200 MHz (typ.) Low collector output capacitance: C = 3.5 pF (typ.) ob Complementary to 2SC3803 Maximum Ratings (Ta = 25C) Characteristics Sym

 8.2. Size:175K  sanyo
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2SA1486

Ordering number:EN2254PNP/NPN Epitaxial Planar Silicon Transistors2SA1480/2SC3790High-Definiton CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Small reverse transfer capacitance and excellent high2042Afrequency characteristic[2SA1480/2SC3790]: Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FJN4302R | 2SC1420 | CTP3551 | 2N5811 | BT2944 | KTA1385D | 2N1038

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