2SA1493P Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1493P
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: MT200
2SA1493P Transistor Equivalent Substitute - Cross-Reference Search
2SA1493P Datasheet (PDF)
2sa1493.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1493 DESCRIPTION With MT-200 package Complement to type 2SC3857 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITI
2sa1493.pdf
2SA1493Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 200 V ICBO VCB=200V 100max A0.224.42.10.12-3.29VCEO 200
2sa1493.pdf
isc Silicon PNP Power Transistor 2SA1493DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
