All Transistors. 2SA1493P Datasheet

 

2SA1493P Datasheet and Replacement


   Type Designator: 2SA1493P
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: MT200
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2SA1493P Datasheet (PDF)

 7.1. Size:250K  jmnic
 2sa1493.pdf pdf_icon

2SA1493P

JMnic Product Specification Silicon PNP Power Transistors 2SA1493 DESCRIPTION With MT-200 package Complement to type 2SC3857 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITI

 7.2. Size:28K  sanken-ele
 2sa1493.pdf pdf_icon

2SA1493P

2SA1493Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 200 V ICBO VCB=200V 100max A0.224.42.10.12-3.29VCEO 200

 7.3. Size:221K  inchange semiconductor
 2sa1493.pdf pdf_icon

2SA1493P

isc Silicon PNP Power Transistor 2SA1493DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

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