All Transistors. 2SA1494Y Datasheet

 

2SA1494Y Datasheet and Replacement


   Type Designator: 2SA1494Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 17 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: MT200
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2SA1494Y Datasheet (PDF)

 7.1. Size:221K  jmnic
 2sa1494.pdf pdf_icon

2SA1494Y

JMnic Product Specification Silicon PNP Power Transistors 2SA1494 DESCRIPTION With MT-200 package Complement to type 2SC3858 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITI

 7.2. Size:28K  sanken-ele
 2sa1494.pdf pdf_icon

2SA1494Y

2SA1494Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 200 VICBO VCB=200V 100max A0.224.42.1VCEO IEBO VEB=6V 100max

 7.3. Size:115K  inchange semiconductor
 2sa1494.pdf pdf_icon

2SA1494Y

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) Good Linearity of hFE Complement to Type 2SC3858 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage -200 V V

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Keywords - 2SA1494Y transistor datasheet

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 2SA1494Y equivalent finder
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