2SA1497 Datasheet and Replacement
Type Designator: 2SA1497
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200(typ)
MHz
Collector Capacitance (Cc): 5.5
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
SPA
-
BJT ⓘ Cross-Reference Search
2SA1497 Datasheet (PDF)
8.1. Size:59K panasonic
2sa1499.pdf 
Power Transistors2SA1499Silicon PNP epitaxial planar typeFor high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High foward current transfer ratio hFEHigh-speed switching 3.1 0.1High collector to base voltage VCBOFull-pack package which can be installed to the heat sink withone screw.1.3 0.21.4 0.1Absolute Maximum Ratings (TC=25C
8.2. Size:25K wingshing
2sa1491.pdf
2SA1491 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3855ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Coll
8.3. Size:25K wingshing
2sa1490.pdf
2SA1490 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3854ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -8 A Colle
8.4. Size:292K jmnic
2sa1491.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1491 DESCRIPTION With TO-3PN package Complement to type 2SC3855 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
8.5. Size:150K jmnic
2sa1490.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1490 DESCRIPTION With TO-3PN package Complement to type 2SC3854 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
8.6. Size:182K jmnic
2sa1492.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1492 DESCRIPTION With TO-3PN package Complement to type 2SC3856 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
8.7. Size:250K jmnic
2sa1493.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1493 DESCRIPTION With MT-200 package Complement to type 2SC3857 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITI
8.8. Size:221K jmnic
2sa1494.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1494 DESCRIPTION With MT-200 package Complement to type 2SC3858 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITI
8.9. Size:28K sanken-ele
2sa1492.pdf
2SA1492Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.19.6 2.0VCBO 180 V ICBO VCB=180V 100max AVCEO 180 V IEBO VEB=6
8.10. Size:28K sanken-ele
2sa1493.pdf
2SA1493Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 200 V ICBO VCB=200V 100max A0.224.42.10.12-3.29VCEO 200
8.11. Size:28K sanken-ele
2sa1494.pdf
2SA1494Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 200 VICBO VCB=200V 100max A0.224.42.1VCEO IEBO VEB=6V 100max
8.12. Size:1286K cn sps
2sa1492t4bl.pdf
2SA1492T4BLSilicon PNP Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emitter Voltage -180 VCEOV Emitt
8.13. Size:428K cn sptech
2sa1492o 2sa1492p 2sa1492y.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1492DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emit
8.14. Size:219K inchange semiconductor
2sa1491.pdf
isc Silicon PNP Power Transistor 2SA1491DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3855Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col
8.15. Size:217K inchange semiconductor
2sa1490.pdf
isc Silicon PNP Power Transistor 2SA1490DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3854Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col
8.16. Size:220K inchange semiconductor
2sa1492.pdf
isc Silicon PNP Power Transistor 2SA1492DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
8.17. Size:221K inchange semiconductor
2sa1493.pdf
isc Silicon PNP Power Transistor 2SA1493DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col
8.18. Size:115K inchange semiconductor
2sa1494.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) Good Linearity of hFE Complement to Type 2SC3858 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage -200 V V
Datasheet: 2SA1493P
, 2SA1493Y
, 2SA1494
, 2SA1494G
, 2SA1494P
, 2SA1494Y
, 2SA1495
, 2SA1496
, D965
, 2SA1498
, 2SA1499
, 2SA15
, 2SA1500
, 2SA1501
, 2SA1502
, 2SA1503
, 2SA1504
.
History: 2N2930
Keywords - 2SA1497 transistor datasheet
2SA1497 cross reference
2SA1497 equivalent finder
2SA1497 lookup
2SA1497 substitution
2SA1497 replacement
