All Transistors. 2SA1516R Datasheet

 

2SA1516R Datasheet and Replacement


   Type Designator: 2SA1516R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 130 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 180 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25 MHz
   Collector Capacitance (Cc): 470 pF
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: TO247
 

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2SA1516R Datasheet (PDF)

 7.1. Size:33K  toshiba
 2sa1516.pdf pdf_icon

2SA1516R

 7.2. Size:259K  jmnic
 2sa1516.pdf pdf_icon

2SA1516R

JMnic Product Specification Silicon PNP Power Transistors 2SA1516 DESCRIPTION With TO-3P(I) package Complement to type 2SC3907 High collector voltage APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

 7.3. Size:203K  inchange semiconductor
 2sa1516.pdf pdf_icon

2SA1516R

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1516DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3907Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CSD882Q | 2N3208

Keywords - 2SA1516R transistor datasheet

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