2SA1579N Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1579N
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: SOT89
2SA1579N Transistor Equivalent Substitute - Cross-Reference Search
2SA1579N Datasheet (PDF)
2sa1579fra.pdf
2SA1579 FRADatasheetHigh-voltage Amplifier Transistor (-120V, -50mA)AEC-Q101 QualifiedlOutlinel SOT-323 Parameter Value SC-70 VCEO-120VIC-50mAUMT3lFeatures lInner circuitl l1)High breakdown voltage. (BVCEO=-120V)2)Complements the 2SC4102 FRA.lApplicationlHIGH VOLTAGE AMPLIFIERlPackaging specificationslBasic
2sa1579 2sa1514k 2sa1038s.pdf
2SA1579 / 2SA1514K / 2SA1038STransistorsHigh-voltage Amplifier Transistor(-120V, -50mA)2SA1579 / 2SA1514K / 2SA1038S External dimensions (Units : mm) Features1) High breakdown voltage. (BVCEO = -120V)2SA15792) Complements the 2SC4102 / 2SC3906K / 2SC2389S.1.252.1 Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO -120 VCollec
2sa1579.pdf
High-voltage Amplifier Transistor (120V, 50mA) 2SA1579 / 2SA1514K Features Dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = 120V) 2SA15792) Complements the 2SC4102 / 2SC3906K Absolute maximum ratings (Ta=25C) 1.25Parameter Symbol Limits Unit2.1Collector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 V0.1Min.Emitter-base volt
2sa1579.pdf
2SA1579 -0.05A , -120V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High Breakdown Voltage. (BVCEO = -120V) Complementary of the 2SC4102 AL33Top View C B11 2CLASSIFICATION OF hFE 2K EProduct-Rank 2SA1579-R 2SA1579-S DRange 180~390
2sa1579.pdf
2SA1 57 9TRANSISTOR(PNP)SOT-323 1. BASE FEATURES 2. EMITTER High breakdown voltage. (BVCEO = -120V) 3. COLLECTOR Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC
2sa1579.pdf
2SA1579 SOT-323 Transistor(PNP)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V I
2sa1579.pdf
SMD Type TransistorsPNP Transistors2SA1579 Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102.1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
