2SA1609 Specs and Replacement
Type Designator: 2SA1609
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO236
- BJT ⓘ Cross-Reference Search
2SA1609 datasheet
8.2. Size:104K sanyo
2sa1606 2sc4159.pdf 
Ordering number EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications Package Dimensions High-voltage switching, AF power amplifier, 100W unit mm output predrivers. 2041 [2SA1606/2SC4159] Features Micaless package facilitating mounting. E Emitter C Collector B Base ( ) 2SA1606 SANYO ... See More ⇒
8.3. Size:149K sanyo
2sa1607 2sc4168.pdf
Ordering number EN2479A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2018A Low saturation voltage. [2SA1607/2SC4168] C Collector B Base E Emitter ( ) 2SA1607 SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C ... See More ⇒
8.5. Size:156K jmnic
2sa1601.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1601 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emi... See More ⇒
8.6. Size:150K jmnic
2sa1600.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em... See More ⇒
8.7. Size:298K shindengen
2sa1601.pdf
SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1601 Case ITO-220 Unit mm (TP15T4) -15A PNP RATINGS ... See More ⇒
8.8. Size:291K shindengen
2sa1600.pdf
SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1600 Case ITO-220 Unit mm (TP12T4) -12A PNP RATINGS ... See More ⇒
8.9. Size:1666K kexin
2sa1608.pdf
SMD Type Transistors PNP Transistors 2SA1608 Features High fT fT=400MHz Complementary to 2SC3739 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Collector Power Diss... See More ⇒
8.10. Size:974K kexin
2sa1607.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1607 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Fast switching speed. High gain-bandwidth product. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 Low saturation voltage. +0.1 1.9-0.1 Complementary to 2SC4168 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base ... See More ⇒
8.11. Size:210K inchange semiconductor
2sa1601.pdf
isc Silicon PNP Power Transistor 2SA1601 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -7.5A CE(sat) C Large Current Capability-I = -15A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is ide... See More ⇒
8.12. Size:148K inchange semiconductor
2sa1600.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-bas... See More ⇒
8.13. Size:213K inchange semiconductor
2sa1606.pdf
isc Silicon PNP Power Transistor 2SA1606 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V (Min) (BR)CEO Large Current Capacity Complement to Type 2SC4159 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=2... See More ⇒
Detailed specifications: 2SA1606, 2SA1606D, 2SA1606E, 2SA1607, 2SA1607-3, 2SA1607-4, 2SA1607-5, 2SA1608, 8550, 2SA161, 2SA1610, 2SA1611, 2SA1612, 2SA1613, 2SA1614, 2SA1615, 2SA1616
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