2SA1630 Datasheet and Replacement
Type Designator: 2SA1630
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 2.5
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package:
TO92
-
BJT ⓘ Cross-Reference Search
2SA1630 Datasheet (PDF)
8.2. Size:38K rohm
2sa1635.pdf 

2SA1635TransistorsTransistors2SC4008(90-173-B97)(94L-646-D97)289
8.4. Size:156K jmnic
2sa1634.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1634 DESCRIPTION With TO-220 package Complement to type 2SC4007 Low collector saturation voltage APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and sy
8.5. Size:158K jmnic
2sa1633.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1633 DESCRIPTION With TO-247 package Complement to type 2SC4278 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and 3 EmitterAbsolute maximum ratings(Tc=25
8.6. Size:160K jmnic
2sa1635.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1635 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SC4008 APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA
8.7. Size:217K inchange semiconductor
2sa1634.pdf 

isc Silicon PNP Power Transistor 2SA1634DESCRIPTIONLow Collector Saturation Voltage: V = -1.5V(Max)@ I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC4007Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpos
8.8. Size:220K inchange semiconductor
2sa1633.pdf 

isc Silicon PNP Power Transistor 2SA1633DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOHigh Power DissipationHigh Current CapacityComplement to Type 2SC4278Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
8.9. Size:217K inchange semiconductor
2sa1635.pdf 

isc Silicon PNP Power Transistor 2SA1635DESCRIPTIONLow Collector Saturation Voltage: V = -1.5V(Max)@ I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC4008Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpos
Datasheet: 2N3200
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