2SA1673 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1673
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3P
2SA1673 Transistor Equivalent Substitute - Cross-Reference Search
2SA1673 Datasheet (PDF)
2sa1673.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1673 DESCRIPTION With TO-3PML package Complement to type 2SC4388 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta
2sa1673.pdf
2SA1673Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 180 V ICBO VCB=180V 10max AVCEO 180 V IEBO VEB=6V
2sa1673.pdf
isc Silicon PNP Power Transistor 2SA1673DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4388Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
2sa1674.pdf
Transistor2SA1674Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC43912.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450
2sa1674 e.pdf
Transistor2SA1674Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC43912.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450
2sa1670.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1670 DESCRIPTION With TO-3PML package Complement to type 2SC4385 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta
2sa1679.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1679 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em
2sa1671.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1671 DESCRIPTION With TO-3PML package Complement to type 2SC4386 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta
2sa1672.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1672 DESCRIPTION With TO-3PML package Complement to type 2SC4387 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta
2sa1670.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1672.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1679.pdf
SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1679 Case : ITO-220Unit : mm(TP5T4)-5A PNPRATINGS
2sa1670.pdf
isc Silicon PNP Power Transistor 2SA1670DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4385Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
2sa1679.pdf
isc Silicon PNP Power Transistor 2SA1679DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -2.5ACE(sat) CLarge Current Capability-I = -5ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is idea
2sa1671.pdf
isc Silicon PNP Power Transistor 2SA1671DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4386Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
2sa1672.pdf
isc Silicon PNP Power Transistor 2SA1672DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4387Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: HA1962 | NTE2560 | 2SA1695O | 2SC1907 | 2SD770
