All Transistors. 2SA1673O Datasheet

 

2SA1673O Datasheet and Replacement


   Type Designator: 2SA1673O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 180 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO3P
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2SA1673O Datasheet (PDF)

 7.1. Size:211K  jmnic
 2sa1673.pdf pdf_icon

2SA1673O

JMnic Product Specification Silicon PNP Power Transistors 2SA1673 DESCRIPTION With TO-3PML package Complement to type 2SC4388 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

 7.2. Size:28K  sanken-ele
 2sa1673.pdf pdf_icon

2SA1673O

2SA1673Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 180 V ICBO VCB=180V 10max AVCEO 180 V IEBO VEB=6V

 7.3. Size:222K  inchange semiconductor
 2sa1673.pdf pdf_icon

2SA1673O

isc Silicon PNP Power Transistor 2SA1673DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4388Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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