All Transistors. 2SA1682 Datasheet

 

2SA1682 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1682

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 170 °C

Transition Frequency (ft): 70 MHz

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO236

2SA1682 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1682 Datasheet (PDF)

1.1. 2sa1682.pdf Size:70K _sanyo

2SA1682
2SA1682

Ordering number:EN3011 PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features Package Dimensions · High breakdown voltage (VCEO? 300V). unit:mm · Small reverse transfer capacitance and excellent high 2018A frequency chacateristic (Cre : 1.5pF typ). [2SA1682] · Excellent DC current gain ratio (hFE ratio : 1.0 typ). · Adoption

1.2. 2sa1682.pdf Size:1000K _kexin

2SA1682
2SA1682

SMD Type Transistors PNP Transistors 2SA1682 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=-50mA 1 2 ● Collector Emitter Voltage VCEO=-300V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Co

4.1. 2sa1681.pdf Size:184K _toshiba

2SA1682
2SA1682

2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = -0.5 V (max) (I C = -1 A) • High speed switching time: t = 300 ns (typ.) stg • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SC4409 Maximum Ratings (

4.2. 2sa1680.pdf Size:172K _toshiba

2SA1682
2SA1682

2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Unit: mm Power Switching Applications • Low collector-emitter saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C) • High-speed switching: tstg = 300 ns (typ.) • Complementary to 2SC4408. Absolute Maximum Rat

4.3. 2sa1689.pdf Size:74K _sanyo

2SA1682
2SA1682

Ordering number:EN3233 PNP Epitaxial Planar Silicon Transistor 2SA1689 TV Camera Deflection High-Voltage Driver Applications Features Package Dimensions · High breakdown voltage. unit:mm · Small reverse transfer capacitance and excellent high 2003A frequency chacacteristic. [2SA1689] · Excellent DC current gain. · Adoption of FBET process. JEDEC : TO-92 B : Base EIAJ : SC-43 C :

4.4. 2sa1683.pdf Size:137K _sanyo

2SA1682
2SA1682

Ordering number:EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions · Adoption of FBET process. unit:mm · High breakdown voltage : VCEO>80V. 2033 [2SA1683/2SC4414] B : Base C : Collector E : Emitter ( ) : 2SA1683 SANYO : SPA Specifications Absolute Maxi

4.5. 2sa1685.pdf Size:152K _sanyo

2SA1682
2SA1682

Ordering number:EN3200 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1685/2SC4443 High-Speed Switching Applications Features Package Dimensions · Fast switching speed. unit:mm · High gain-bandwidth product. 2059 · Low saturation voltage. [2SA1685/2SC4443] B : Base C : Collector E : Emitter ( ) : 2SA1685 SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Paramet

4.6. 2sa1688.pdf Size:150K _sanyo

2SA1682
2SA1682

Ordering number:EN2798A PNP Epitaxial Planar Silicon Transistors 2SA1688 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · Ideally suited for use in FM RF amplifiers, mixers, unit:mm oscillators. converters, and IF amplifiers. 2059A [2SA1688] Features · High power gain : PG=22dB typ (f=100MHz). · Very small-sized package permitting 2SA1688- ap

4.7. 2sa1687.pdf Size:143K _sanyo

2SA1682
2SA1682

Ordering number:EN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions · Very small-sized package permitting the 2SA1687/ unit:mm 2SC4446-applied sets to be made small and slim. 2059 · High VEBO. [2SA1687/2SC4446] B : Base C : Collector E : Emitter ( ) : 2SA1687 SANYO : MCP Specificatio

4.8. 2sa1681.pdf Size:1012K _kexin

2SA1682
2SA1682

SMD Type Transistors PNP Transistors 2SA1681 1.70 0.1 ■ Features ● Low saturation voltage ● High speed switching time ● Small flat package 0.42 0.1 0.46 0.1 ● PC = 1.0 to 2.0 W (mounted on a ceramic substrate) ● Complementary to 2SC4409 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VC

4.9. 2sa1685.pdf Size:1409K _kexin

2SA1682
2SA1682

SMD Type Transistors PNP Transistors 2SA1685 ■ Features ● Fast switching speed. ● High gain-bandwidth product. ● Low saturation voltage. ● Complementary to 2SC4443 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5

Datasheet: 2SA1673Y , 2SA1674 , 2SA1676 , 2SA1677 , 2SA1678 , 2SA168 , 2SA1680 , 2SA1681 , 2N2907 , 2SA1683 , 2SA1685 , 2SA1687 , 2SA1688 , 2SA1688-3 , 2SA1688-4 , 2SA1688-5 , 2SA1689 .

 


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