All Transistors. 2SA1694P Datasheet

 

2SA1694P Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1694P
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO3P

 2SA1694P Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1694P Datasheet (PDF)

 7.1. Size:174K  utc
2sa1694.pdf

2SA1694P 2SA1694P

UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTCs advanced technology to provide the customers withhigh DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1694 is suitable for audio and general purpo

 7.2. Size:193K  jmnic
2sa1694.pdf

2SA1694P 2SA1694P

JMnic Product Specification Silicon PNP Power Transistors 2SA1694 DESCRIPTION With TO-3PN package Complement to type 2SC4467 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 7.3. Size:27K  sanken-ele
2sa1694.pdf

2SA1694P

2SA1694Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)RatingsSymbol Ratings Unit Symbol Conditions Unit0.24.80.415.6VCBO 120 V ICBO VCB=120V 10max A 0.19.6 2.010maxVCEO 120 V IEBO

 7.4. Size:221K  inchange semiconductor
2sa1694.pdf

2SA1694P 2SA1694P

isc Silicon PNP Power Transistor 2SA1694DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4467Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Datasheet: 2SA1690 , 2SA1692 , 2SA1693 , 2SA1693O , 2SA1693P , 2SA1693Y , 2SA1694 , 2SA1694O , 9014 , 2SA1694Y , 2SA1695 , 2SA1695O , 2SA1695P , 2SA1695Y , 2SA1696 , 2SA1697 , 2SA1698 .

History: GET930 | CSA1943FR

 

 
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