2SA170 Datasheet, Equivalent, Cross Reference Search

Ordering number:EN3024PNP/NPN Epitaxial Planar Silicon Transistors2SA1704/2SC4484High-Current Driver ApplicationsApplications Package Dimensions Voltage regulators, relay drivers. lamp drivers. unit:mm2064Features [2SA1704/2SC4484] Adoption of FBET, MBIT processes. Low collector-to-emitter voltage. Large current capacity and wide ASO. Fast switching speed.

Ordering number:ENN3096PNP/NPN Epitaxial Planar Silicon Transistors2SA1709/2SC4489High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064A Fast switching speed.[2SA1709/2SC4489]2.51.456.9 1.00.60.9 0.51 2 30.451 : Base2 : Collector( ) 2SA17093 :

Ordering number:ENN3025PNP/NPN Epitaxial Planar Silicon Transistors2SA1705/2SC4485Low-Frequency Power Amplifier ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit:mm2064AFeatures [2SA1705/2SC4485]2.5 Adoption of FBET process.1.45 Fast switching speed.6.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector(

Ordering number : EN3094A2SA1708 / 2SC4488SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1708 / 2SC4488High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed.Specifications ( ) : 2SA1708Absolute Maximum Ratings at Ta=25CParameter Symbol

Ordering number:EN2974APNP Epitaxial Planar Silicon Transistor2SA1700High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2045B Excellent hFE linearity.[2SA1700]1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SA1700]1 : Base2 : Collector3 : Emitter4 : Collecto

Ordering number:EN3091PNP Epitaxial Planar Silicon Transistor2SA1702High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Low saturation votlage.2064 Large current capacity.[2SA1702] Fast switching speed.E : EmitterC : CollectorB : BaseSANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25C

Ordering number:ENN3026APNP/NPN Epitaxial Planar Silicon Transistors2SA1706/2SC4486High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit:mm2064AFeatures [2SA1706/2SC4486]2.5 Adoption of FBET, MBIT processes.1.45 Large current capacity and wide ASO.6.9 1.0 Fast switching speed.0.60.9 0.5

Ordering number:ENN3093PNP/NPN Epitaxial Planar Silicon Transistors2SA1707/2SC4487High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity, wide ASO.2064A Low collector-to-emitter saturation voltage.[2SA1707/2SC4487] Fast switching speed.2.51.456.9 1.00.60.9 0.51 2 30.451 : Em

Ordering number:EN3023PNP/NPN Epitaxial Planar Silicon Transistor2SA1703/2SC4483Low-Frequency Amplifier,Electronic Governor ApplicationsFeatures Package Dimensions Low collector-to-emitter saturation voltage.unit:mm2064[2SA1703/2SC4483]E : EmitterC : CollectorB : Base( ) : 2SA1703SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol

Ordering number:EN3022PNP/NPN Epitaxial Planar Silicon Transistors2SA1701/2SC4481Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor driver applications.2064[2SA1701/2SC4481]Features Large current capacity. Low collector-to-emitter saturation voltage.E : Emitt

Ordering number : EN3094B2SA1708/2SC4488Bipolar Transistorhttp://onsemi.com( ) ( ) ( ) ( )- 100V, - 1A, Low VCE sat , PNP NPN Single NMPFeatures Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed( )2SA1708SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Ba

Ordering number : EN3093A2SA1707/2SC4487Bipolar Transistorhttp://onsemi.com(-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMPFeatures Adoption of FBET, MBIT processes Large current capacity, wide ASO Low collector-to-emitter saturation voltage Fast switching speed( )2SA1707SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings

Ordering number : EN3026B2SA1706Bipolar Transistorhttp://onsemi.com ( )50V, 2A, Low VCE sat , PNP Single NMPApplicaitons Voltage regulators, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Large current capacity and wide ASO Fast switching speedSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Rating

Ordering number : EN3096A2SA1709/2SC4489Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMPFeatures Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed( )2SA1709SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VC

Ordering number : EN3025A2SA1705Bipolar Transistorhttp://onsemi.com( )-50V, -1A, Low VCE sat , PNP Single NMPApplicaitons Voltage regulators, relay drivers, lamp driversFeatures Adoption of FBET process Fast switching speedSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO --60 VCollecto

UNISONIC TECHNOLOGIES CO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T TO-251 B C E Tube2SA1700L-x-TN3-R 2SA1700G-x-TN3-R TO-252 B C E Tape Ree

2SA1700(PNP)TO-251/TO-252-2L Transistor TO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High breakdown voltage Adoption of MBIT process Excellent hFE linearity TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Coll

2SA1703(3CA1703) PNP /SILICON PNP TRANSISTOR : Purpose: Low frequency amplifier, electronic governor applications. Features: Low V . CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO V -25 V CEO V -5.0 V E

isc Silicon PNP Power Transistor 2SA1700DESCRIPTIONHigh breakdown voltageLow Collector-Emitter Saturation VoltageHigh Power Dissipation-: P = 10W@T =25,P = 10W@Ta=25C C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor high voltage driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL