2N1382BN Specs and Replacement
Type Designator: 2N1382BN
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5
2N1382BN Substitution
- BJT ⓘ Cross-Reference Search
2N1382BN datasheet
Detailed specifications: 2N1377, 2N1378, 2N1379, 2N138, 2N1380, 2N1381, 2N1382, 2N1382BL, B647, 2N1382GN, 2N1382O, 2N1382R, 2N1382V, 2N1382Y, 2N1383, 2N1383BL, 2N1383BN
Keywords - 2N1382BN pdf specs
2N1382BN cross reference
2N1382BN equivalent finder
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2N1382BN substitution
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History: KT315I1
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