2N1382O Specs and Replacement
Type Designator: 2N1382O
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO5
2N1382O Substitution
- BJT ⓘ Cross-Reference Search
2N1382O datasheet
Detailed specifications: 2N1379, 2N138, 2N1380, 2N1381, 2N1382, 2N1382BL, 2N1382BN, 2N1382GN, D667, 2N1382R, 2N1382V, 2N1382Y, 2N1383, 2N1383BL, 2N1383BN, 2N1383GN, 2N1383O
Keywords - 2N1382O pdf specs
2N1382O cross reference
2N1382O equivalent finder
2N1382O pdf lookup
2N1382O substitution
2N1382O replacement
History: 2N1383R | 2N1383V | 2SA1694P | 2N1499A | 2N1382BN | GT403I | 2SD1563
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
2sc1945 | c2383 | 2sb681 | bc639 equivalent | bd138 transistor equivalent | c1096 transistor | c1345 transistor | jcs640c

