2SA472 Datasheet and Replacement
Type Designator: 2SA472
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.055 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO1
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2SA472 Datasheet (PDF)
2sa473.pdf

2SA473 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1173ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Jun
2sa473.pdf

isc Silicon PNP Power Transistor 2SA473DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1173Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Car radio and car stereo output stage applications.ABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BC847RA | 2N2874 | 2SB744A | 2N332A | MMBT3906HE3 | BDW24 | 2SC5702
Keywords - 2SA472 transistor datasheet
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History: BC847RA | 2N2874 | 2SB744A | 2N332A | MMBT3906HE3 | BDW24 | 2SC5702



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