2SA473O Specs and Replacement
Type Designator: 2SA473O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO202
2SA473O Substitution
- BJT ⓘ Cross-Reference Search
2SA473O datasheet
2SA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1173 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Jun... See More ⇒
Detailed specifications: 2SA468, 2SA469, 2SA47, 2SA470, 2SA471, 2SA472, 2SA473, 2SA473G, 2N3055, 2SA473R, 2SA473Y, 2SA474, 2SA475, 2SA476, 2SA477, 2SA478, 2SA479
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