2SA477 Specs and Replacement
Type Designator: 2SA477
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.055 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO1
2SA477 Substitution
- BJT ⓘ Cross-Reference Search
2SA477 datasheet
2SA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1173 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Jun... See More ⇒
Detailed specifications: 2SA473 , 2SA473G , 2SA473O , 2SA473R , 2SA473Y , 2SA474 , 2SA475 , 2SA476 , 2SA1943 , 2SA478 , 2SA479 , 2SA48 , 2SA480 , 2SA482 , 2SA483 , 2SA484 , 2SA484B .
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