2SA479 Specs and Replacement
Type Designator: 2SA479
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO1
2SA479 Substitution
- BJT ⓘ Cross-Reference Search
2SA479 datasheet
2SA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1173 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Jun... See More ⇒
Detailed specifications: 2SA473O, 2SA473R, 2SA473Y, 2SA474, 2SA475, 2SA476, 2SA477, 2SA478, A1015, 2SA48, 2SA480, 2SA482, 2SA483, 2SA484, 2SA484B, 2SA484R, 2SA484Y
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