All Transistors. 2SA495G Datasheet

 

2SA495G Datasheet and Replacement


   Type Designator: 2SA495G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
 

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2SA495G Datasheet (PDF)

 9.1. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA495G

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:87K  toshiba
 2sa490.pdf pdf_icon

2SA495G

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:42K  no
 2sa497.pdf pdf_icon

2SA495G

 9.4. Size:159K  jmnic
 2sa490.pdf pdf_icon

2SA495G

JMnic Product Specification Silicon PNP Power Transistors 2SA490 DESCRIPTION With TO-220 package Complement to type 2SC790 APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

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Datasheet: 2SA490 , 2SA493 , 2SA493G , 2SA494 , 2SA494G , 2SA494O , 2SA494Y , 2SA495 , TIP31 , 2SA495GG , 2SA495GO , 2SA495GR , 2SA495GY , 2SA495O , 2SA495R , 2SA495Y , 2SA496 .

History: NA01E | 2SC3356-R23

Keywords - 2SA495G transistor datasheet

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