2SA496O Specs and Replacement

Type Designator: 2SA496O

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.55 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO126

 2SA496O Substitution

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2SA496O datasheet

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2SA496O

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2SA496O

isc Silicon PNP Power Transistor 2SA496 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -30V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

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Detailed specifications: 2SA495GG, 2SA495GO, 2SA495GR, 2SA495GY, 2SA495O, 2SA495R, 2SA495Y, 2SA496, 9014, 2SA496R, 2SA496Y, 2SA497, 2SA498, 2SA499, 2SA499O, 2SA499R, 2SA499Y

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