All Transistors. 2SA508 Datasheet

 

2SA508 Datasheet and Replacement


   Type Designator: 2SA508
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.075 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.005 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO72
 

 2SA508 Substitution

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2SA508 Datasheet (PDF)

 9.1. Size:756K  1
 2sa509.pdf pdf_icon

2SA508

 9.2. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA508

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:306K  vishay
 vs-fa72sa50lc.pdf pdf_icon

2SA508

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.4. Size:214K  inchange semiconductor
 2sa505.pdf pdf_icon

2SA508

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

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Keywords - 2SA508 transistor datasheet

 2SA508 cross reference
 2SA508 equivalent finder
 2SA508 lookup
 2SA508 substitution
 2SA508 replacement

 

 
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