2SA508 Datasheet. Specs and Replacement
Type Designator: 2SA508
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO72
2SA508 Substitution
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2SA508 datasheet
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
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isc Silicon PNP Power Transistor 2SA505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO... See More ⇒
Detailed specifications: 2SA504O, 2SA504Y, 2SA505, 2SA505O, 2SA505R, 2SA505Y, 2SA506, 2SA507, 431, 2SA509, 2SA509G, 2SB562-C, 2SA509GTM, 2SA509O, 2SA509Y, 2SA51, 2SA510
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