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2SA509O Specs and Replacement


   Type Designator: 2SA509O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92
 

 2SA509O Substitution

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2SA509O detailed specifications

 8.1. Size:756K  1
 2sa509.pdf pdf_icon

2SA509O

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 9.1. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA509O

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 9.2. Size:306K  vishay
 vs-fa72sa50lc.pdf pdf_icon

2SA509O

VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for ... See More ⇒

 9.3. Size:214K  inchange semiconductor
 2sa505.pdf pdf_icon

2SA509O

isc Silicon PNP Power Transistor 2SA505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO... See More ⇒

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Detailed specifications: 2SA505Y , 2SA506 , 2SA507 , 2SA508 , 2SA509 , 2SA509G , 2SB562-C , 2SA509GTM , BD136 , 2SA509Y , 2SA51 , 2SA510 , 2SA510O , 2SA510R , 2SA511 , 2SA511O , 2SA511R .

History: 2SA512

Keywords - 2SA509O transistor specs

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