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2SA510 Specs and Replacement


   Type Designator: 2SA510
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO39
 

 2SA510 Substitution

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2SA510 detailed specifications

 9.1. Size:279K  onsemi
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2SA510

2SA2153 Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single www.onsemi.com Features Adoption of MBIT Process Low Saturation Voltage Large Current Capacity and Wide ASO ELECTRICAL CONNECTION 2 Typical Applications Voltage Regulators 1 Base 1 2 Collector Relay Drivers 3 Emitter Lamp Drivers Electrical Equipment 3 SPECIFICATIONS M... See More ⇒

Detailed specifications: 2SA508 , 2SA509 , 2SA509G , 2SB562-C , 2SA509GTM , 2SA509O , 2SA509Y , 2SA51 , A42 , 2SA510O , 2SA510R , 2SA511 , 2SA511O , 2SA511R , 2SA512 , 2SA512O , 2SA512R .

History: 2SA525 | 2SA511R

Keywords - 2SA510 transistor specs

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