2SA55 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA55
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.08 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: R27
2SA55 Transistor Equivalent Substitute - Cross-Reference Search
2SA55 Datasheet (PDF)
2sa554.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L 2SA554 TRANSISTOR (PNP) 1. BASEFEATURES2. COLLECTOR Low Saturation Voltage3. EMITTER High Speed SwitchingMARKING: A554 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .