All Transistors. 2SA556 Datasheet

 

2SA556 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA556
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO92

 2SA556 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA556 Datasheet (PDF)

 9.1. Size:672K  jiangsu
2sa554.pdf

2SA556
2SA556

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L 2SA554 TRANSISTOR (PNP) 1. BASEFEATURES2. COLLECTOR Low Saturation Voltage3. EMITTER High Speed SwitchingMARKING: A554 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , C3198 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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