All Transistors. 2SA556 Datasheet


2SA556 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA556

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92

2SA556 Transistor Equivalent Substitute - Cross-Reference Search


2SA556 Datasheet (PDF)

9.1. 2sa554.pdf Size:672K _jiangsu

2SA556 2SA556

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L 2SA554 TRANSISTOR (PNP) 1. BASEFEATURES2. COLLECTOR Low Saturation Voltage3. EMITTER High Speed SwitchingMARKING: A554 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


Back to Top