2SA566 Datasheet and Replacement
Type Designator: 2SA566
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO66
2SA566 Substitution
2SA566 Datasheet (PDF)
2sa562tm.pdf

2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C 1 watt amplifier application. Complementary to 2SC1959. Maximum Ratings (Ta == 25C) =
2sa562-y.pdf

MCCTM Micro Commercial Components2SA562-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA562-YPhone: (818) 701-4933Fax: (818) 701-4939Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant. See o
2sa562-o.pdf

MCCTM Micro Commercial Components2SA562-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA562-YPhone: (818) 701-4933Fax: (818) 701-4939Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant. See o
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BF491M | ASZ11 | NB021HJ | ASY75 | NB212ZJ | GES4121 | KSD5068
Keywords - 2SA566 transistor datasheet
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History: BF491M | ASZ11 | NB021HJ | ASY75 | NB212ZJ | GES4121 | KSD5068



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