2SA606S Datasheet. Specs and Replacement
Type Designator: 2SA606S 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
- BJT ⓘ Cross-Reference Search
2SA606S datasheet
9.2. Size:36K sanyo
2sa608n 2sc536n.pdf 
Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1 ... See More ⇒
9.3. Size:40K sanyo
2sa608 2sc536n.pdf
Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter ... See More ⇒
9.4. Size:77K secos
2sa608n.pdf
2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large current capacity and wide ASO. G H APPLICATIONS Emitter Collector Capable of being used in the low frequency to Base J high frequency range. A D Millimeter REF. B Min.... See More ⇒
9.5. Size:428K secos
2sa608.pdf
2SA608 -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Capable of being used in the low frequency to high frequency range. G Large current capacity and wide ASO. H Emitter Collector Base CLASSIFICATION OF hFE J A D Product-Rank 2SA60... See More ⇒
9.6. Size:239K lge
2sa608.pdf
2SA608(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V Dimensions in inches and (mil... See More ⇒
9.7. Size:94K wej
2sa608s.pdf
RoHS 2SA608S 2SA608S TRANSISTOR (PNP) TO-92S FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM 300 mW (Tamb=25 ) 3. BASE Collector current ICM -100 mA 123 Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) ... See More ⇒
Detailed specifications: 2SA594R, 2SA594Y, 2SA597, 2SA60, 2SA603, 2SA604, 2SA605, 2SA606, 2N3055, 2SA607, 2SA607S, 2SA608, 2SA608K, 2SA608KNP, 2SA608NP, 2SA608SPA, 2SA609
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