2SA607 Datasheet. Specs and Replacement
Type Designator: 2SA607 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO37
2SA607 Substitution
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2SA607 datasheet
Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1 ... See More ⇒
Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter ... See More ⇒
Detailed specifications: 2SA594Y, 2SA597, 2SA60, 2SA603, 2SA604, 2SA605, 2SA606, 2SA606S, BC548, 2SA607S, 2SA608, 2SA608K, 2SA608KNP, 2SA608NP, 2SA608SPA, 2SA609, 2SA609NP
Keywords - 2SA607 pdf specs
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History: BD700 | 2N5883G | ZUMT717 | BD697A | 2N5884G | 2N5794UC | 2N5794U
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