2SA607S Specs and Replacement
Type Designator: 2SA607S
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO37
2SA607S Transistor Equivalent Substitute - Cross-Reference Search
2SA607S detailed specifications
2sa608n 2sc536n.pdf
Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1 ... See More ⇒
2sa608 2sc536n.pdf
Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter ... See More ⇒
Detailed specifications: 2SA597 , 2SA60 , 2SA603 , 2SA604 , 2SA605 , 2SA606 , 2SA606S , 2SA607 , TIP41 , 2SA608 , 2SA608K , 2SA608KNP , 2SA608NP , 2SA608SPA , 2SA609 , 2SA609NP , 2SA609SP .
Keywords - 2SA607S transistor specs
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