2SA61 Specs and Replacement
Type Designator: 2SA61
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO1
2SA61 Substitution
2SA61 datasheet
2sa614.pdf
isc Silicon PNP Power Transistor 2SA614 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -55V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.5V (Max.)@ I = -1A CE(sat) C Collector Power Dissipation- P = 25W@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplif... See More ⇒
Detailed specifications: 2SA608 , 2SA608K , 2SA608KNP , 2SA608NP , 2SA608SPA , 2SA609 , 2SA609NP , 2SA609SP , TIP3055 , 2SA610 , 2SA611 , 2SA612 , 2SA613 , 2SA614 , 2SA615 , 2SA616 , 2SA617 .
History: 2SA609NP
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History: 2SA609NP
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BJT: GA1A4M | SBT42 | 2SA200-Y
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