2SA616 Datasheet. Specs and Replacement

Type Designator: 2SA616

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 7 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO66

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2SA616 datasheet

 9.1. Size:217K  inchange semiconductor

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2SA616

isc Silicon PNP Power Transistor 2SA614 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -55V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.5V (Max.)@ I = -1A CE(sat) C Collector Power Dissipation- P = 25W@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplif... See More ⇒

Detailed specifications: 2SA609SP, 2SA61, 2SA610, 2SA611, 2SA612, 2SA613, 2SA614, 2SA615, TIP31C, 2SA617, 2SA617K, 2SA618, 2SA618K, 2SA620, 2SA621, 2SA622, 2SA623

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