2SA616 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA616
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 7 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO66
2SA616 Transistor Equivalent Substitute - Cross-Reference Search
2SA616 Datasheet (PDF)
2sa614.pdf
isc Silicon PNP Power Transistor 2SA614DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -55V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = -0.5V (Max.)@ I = -1ACE(sat) CCollector Power Dissipation-: P = 25W@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplif
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .