2SA634
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA634
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 30
MHz
Collector Capacitance (Cc): 30
pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package:
TO202
2SA634
Transistor Equivalent Substitute - Cross-Reference Search
2SA634
Datasheet (PDF)
..2. Size:122K jmnic
2sa634.pdf 
Power Transistors www.jmnic.com 2SA634 Silicon PNP Transistors B C E Features With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 40 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 3.0 A PC Collector power dissipation 10 W Tj Ju
..3. Size:146K inchange semiconductor
2sa634.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA634 DESCRIPTION With TO-202 package Complement to type 2SC1096 High current capability APPLICATIONS Audio frequency power amplifier Low speed switching PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratin
9.1. Size:109K jmnic
2sa633.pdf
Power Transistors www.jmnic.com2SA633 Silicon PNP Transistors B C E Features With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 30 V VCEO Collector to emitter voltage 30 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 2.0 A PC Collector power dissipation 10 W Tj Jun
9.2. Size:150K jmnic
2sa636 2sa636a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION With TO-202 package Complement to type 2SC1098/1098A High breakdown voltage High transition frequency APPLICATIONS For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202)
9.3. Size:137K inchange semiconductor
2sa633.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA633 DESCRIPTION With TO-202 package High current capability APPLICATIONS Power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC
9.4. Size:146K inchange semiconductor
2sa636 2sa636a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION With TO-202 package Complement to type 2SC1098/1098A High breakdown voltage High transition frequency APPLICATIONS For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified
9.5. Size:180K inchange semiconductor
2sa635.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA635DESCRIPTIONWith TO-202 packageHigh current capabilityMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -6
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