2SA638 Datasheet. Specs and Replacement
Type Designator: 2SA638
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 130 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO92
2SA638 Substitution
- BJT ⓘ Cross-Reference Search
2SA638 datasheet
Power Transistors www.jmnic.com 2SA633 Silicon PNP Transistors B C E Features With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 30 V VCEO Collector to emitter voltage 30 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 2.0 A PC Collector power dissipation 10 W Tj Jun... See More ⇒
Power Transistors www.jmnic.com 2SA634 Silicon PNP Transistors B C E Features With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 40 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 3.0 A PC Collector power dissipation 10 W Tj Ju... See More ⇒
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Detailed specifications: 2SA634L, 2SA634Z, 2SA635, 2SA636, 2SA636A, 2SA636L, 2SA636Z, 2SA637, SS8050, 2SA638S, 2SA639, 2SA639S, 2SA64, 2SA640, 2SA641, 2SA642, 2SA643
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