2SA64 Datasheet. Specs and Replacement

Type Designator: 2SA64

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.08 W

Maximum Collector-Base Voltage |Vcb|: 16 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 0.04 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 6 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 65

Noise Figure, dB: -

Package: TO1

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isc Silicon PNP Power Transistor 2SA648 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒

Detailed specifications: 2SA636A, 2SA636L, 2SA636Z, 2SA637, 2SA638, 2SA638S, 2SA639, 2SA639S, C3198, 2SA640, 2SA641, 2SA642, 2SA643, 2SA645, 2SA646, 2SA647, 2SA648

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