2SA640 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA640
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
2SA640 Transistor Equivalent Substitute - Cross-Reference Search
2SA640 Datasheet (PDF)
2sa648.pdf
isc Silicon PNP Power Transistor 2SA648DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
2sa649.pdf
isc Silicon PNP Power Transistor 2SA649DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
Datasheet: 2SA636L , 2SA636Z , 2SA637 , 2SA638 , 2SA638S , 2SA639 , 2SA639S , 2SA64 , 13005 , 2SA641 , 2SA642 , 2SA643 , 2SA645 , 2SA646 , 2SA647 , 2SA648 , 2SA649 .
