2SA646 Datasheet and Replacement
Type Designator: 2SA646
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO202
2SA646 Substitution
2SA646 Datasheet (PDF)
2sa648.pdf

isc Silicon PNP Power Transistor 2SA648DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KC846AW | TIS04 | AUY22-2 | NA32MX | 2SB149N | PIMH9 | PBSS5350X
Keywords - 2SA646 transistor datasheet
2SA646 cross reference
2SA646 equivalent finder
2SA646 lookup
2SA646 substitution
2SA646 replacement
History: KC846AW | TIS04 | AUY22-2 | NA32MX | 2SB149N | PIMH9 | PBSS5350X



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