2SA648 Datasheet. Specs and Replacement

Type Designator: 2SA648

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

 2SA648 Substitution

- BJT ⓘ Cross-Reference Search

 

2SA648 datasheet

 ..1. Size:189K  inchange semiconductor

 2sa648.pdf pdf_icon

2SA648

isc Silicon PNP Power Transistor 2SA648 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒

 9.1. Size:39K  no

 2sa641.pdf pdf_icon

2SA648

... See More ⇒

 9.2. Size:82K  usha

 2sa642.pdf pdf_icon

2SA648

Transistors 2SA642 ... See More ⇒

 9.3. Size:82K  usha

 2sa643.pdf pdf_icon

2SA648

Transistors 2SA643 ... See More ⇒

SHOW MORE

Detailed specifications: 2SA64, 2SA640, 2SA641, 2SA642, 2SA643, 2SA645, 2SA646, 2SA647, D209L, 2SA649, 2SA65, 2SA650, 2SA651, 2SA652, 2SA653, 2SA653A, 2SA656

Keywords - 2SA648 pdf specs

 2SA648 cross reference

 2SA648 equivalent finder

 2SA648 pdf lookup

 2SA648 substitution

 2SA648 replacement