All Transistors. 2SA653 Datasheet

 

2SA653 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA653
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO66

 2SA653 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA653 Datasheet (PDF)

 ..1. Size:189K  inchange semiconductor
2sa653.pdf

2SA653
2SA653

isc Silicon PNP Power Transistor 2SA653DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOContunuous Collector Current I = -1ACPower Dissipation P = 15W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier color TV verticaldeflection output appl

 9.1. Size:145K  jmnic
2sa658.pdf

2SA653
2SA653

JMnic Product Specification Silicon PNP Power Transistors 2SA658 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC521 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL

 9.2. Size:145K  jmnic
2sa656.pdf

2SA653
2SA653

JMnic Product Specification Silicon PNP Power Transistors 2SA656 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC519 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL

 9.3. Size:145K  jmnic
2sa657.pdf

2SA653
2SA653

JMnic Product Specification Silicon PNP Power Transistors 2SA657 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC520 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL

 9.4. Size:189K  inchange semiconductor
2sa658.pdf

2SA653
2SA653

isc Silicon PNP Power Transistor 2SA658DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min.)(BR)CEOComplement to Type 2SC521Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RAT

 9.5. Size:189K  inchange semiconductor
2sa651.pdf

2SA653
2SA653

isc Silicon PNP Power Transistor 2SA651DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 9.6. Size:189K  inchange semiconductor
2sa650.pdf

2SA653
2SA653

isc Silicon PNP Power Transistor 2SA650DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 9.7. Size:187K  inchange semiconductor
2sa656.pdf

2SA653
2SA653

isc Silicon PNP Power Transistor 2SA656DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -110V(Min.)(BR)CEOComplement to Type 2SC519Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RA

 9.8. Size:190K  inchange semiconductor
2sa652.pdf

2SA653
2SA653

isc Silicon PNP Power Transistor 2SA652DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOContunuous Collector Current I = -1ACPower DissipationP = 15W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier color TV verticaldeflection output appli

 9.9. Size:189K  inchange semiconductor
2sa657.pdf

2SA653
2SA653

isc Silicon PNP Power Transistor 2SA657DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOComplement to Type 2SC520Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RAT

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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