2SA668 Datasheet and Replacement
Type Designator: 2SA668
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
2SA668 Substitution
2SA668 Datasheet (PDF)
2sa663.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA663 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC793 APPLICATIONS For radio frequency,audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(
2sa663.pdf

isc Silicon PNP Power Transistor 2SA663DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = -2.3V(Max.)@ I = -5ACE(sat) CComplement to Type 2SC793Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RAT
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: ASY58 | PBSS8510PA | 2N1132CSM | 2SC1959M | MJE33A | ASY51 | NA21ZH
Keywords - 2SA668 transistor datasheet
2SA668 cross reference
2SA668 equivalent finder
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History: ASY58 | PBSS8510PA | 2N1132CSM | 2SC1959M | MJE33A | ASY51 | NA21ZH



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